• DocumentCode
    2931078
  • Title

    Diamond power devices - possbility of high voltage applicatios

  • Author

    Yamasaki, S. ; Matsumoto, T. ; Oyama, K. ; Kato, H. ; Ogura, M. ; Takeuchi, D. ; Makino, T. ; Nishizawa, S. ; Oohash, H. ; Okushi, H.

  • Author_Institution
    Energy Technol. Res. Inst., AIST, Tsukuba, Japan
  • fYear
    2011
  • fDate
    23-27 Oct. 2011
  • Firstpage
    418
  • Lastpage
    420
  • Abstract
    As widely known, diamond has a higher break-down voltage than other semiconductor materials, 30 times than silicon and 3 times than silicon-carbide. Because of its superior property, diamond has a high potential of high voltage power devices. In addition diamond has unique properties, namely transport property of heavily doped material over 1020 cm-3, high density exciton being stable even at room temperature, negative electron affinity with hydrogen terminated surface, etc. We have fabricated diamond devices using these properties, such as ultraviolet light emitting diodes, a new type of diode with high breakdown voltage and low ON resistance, high current density flow diode using heavily doped layers, and so on. In this key note lecture, we show the recent achievements of these electronic devices and discuss the potential of diamond semiconductor as a high voltage power device.
  • Keywords
    diamond; electric breakdown; electron affinity; elemental semiconductors; light emitting diodes; C; breakdown voltage; diamond power devices; heavily doped material; high current density flow diode; high density exciton; high voltage applications; high voltage power devices; hydrogen terminated surface; negative electron affinity; temperature 293 K to 298 K; transport property; ultraviolet light emitting diodes; Conductivity; Current density; Diamond-like carbon; Electric potential; Junctions; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Power Equipment - Switching Technology (ICEPE-ST), 2011 1st International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4577-1273-9
  • Type

    conf

  • DOI
    10.1109/ICEPE-ST.2011.6123021
  • Filename
    6123021