Design of a new CMOS low noise amplifier for ultra wide-band wireless receiver in 0.18 μm technology

Author

Ghosh, Partha Pratim ; Xiao, Enjun

Author_Institution

Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA

fYear

2005

fDate

5-8 Sept. 2005

Firstpage

514

Lastpage

519

Abstract

This paper discusses the design of a new single ended low noise amplifier (LNA), in the 0.18 μm CMOS process, for the ultra wide-band (UWB) of 3.1 GHz to 5.15 GHz. Improved noise figure and excellent input impedance match are achieved using the design. From a power supply of 1.8 V the LNA exhibits a noise figure (NF) of 2.29 dB to 2.48 dB, input reflection coefficient (S11) of less than -14.9 dB and a small signal power gain (S21) of 11.20 dB to 12.10 dB over the whole range. The equation for noise factor is derived for the UWB LNA.

Keywords

CMOS integrated circuits; MMIC amplifiers; UHF amplifiers; low noise amplifiers; radio receivers; ultra wideband communication; 0.18 mum; 1.8 V; 11.20 to 12.10 dB; 2.29 to 2.48 dB; 3.1 to 5.15 GHz; CMOS low noise amplifier; LNA; UWB; ultra wide-band wireless receiver; Acoustic reflection; Broadband amplifiers; CMOS process; CMOS technology; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Power supplies; Ultra wideband technology; CMOS amplifiers; Cascode; Low Noise amplifiers; UWB; Ultra Wide-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband, 2005. ICU 2005. 2005 IEEE International Conference on

Print_ISBN

0-7803-9397-X

Type

conf

DOI

10.1109/ICU.2005.1570041

Filename

1570041