A 145MHz low phase-noise capacitive silicon micromechanical oscillator

Author

Lavasani, Hossein Miri ; Samarao, Ashwin K. ; Casinovi, Giorgio ; Ayazi, Farrokh

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

This paper reports on the implementation and characterization of a low phase-noise oscillator based on a very high quality factor (Q) 145MHz capacitive silicon micromechanical resonator. The utilized resonator is a silicon bulk acoustic resonator (SiBAR) operating in its first width-extensional mode with a maximum Q_unloaded~74,000 that is specifically optimized for low motional impedance. The sustaining circuitry is a 3.6mW CMOS transimpedance amplifier (TIA) that uses common source topology with local shunt-shunt feedback. The measured phase-noise of the oscillator at 1kHz offset from the carrier is -111dBc/Hz with phase-noise floor reaching below -133dBc/Hz.

Keywords

CMOS analogue integrated circuits; acoustic resonators; bulk acoustic wave devices; micromechanical resonators; oscillators; phase noise; silicon; CMOS transimpedance amplifier; frequency 145 MHz; high quality factor; local shunt-shunt feedback; low motional impedance; low phase-noise capacitive silicon micromechanical oscillator; micromechanical resonator; power 3.6 mW; silicon bulk acoustic resonator; source topology; Frequency response; Frequency synthesizers; Impedance; Micromechanical devices; Oscillators; Polarization; Q measurement; Silicon; Timing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796784

Filename

4796784