• DocumentCode
    2931636
  • Title

    Variability modeling and impact on design

  • Author

    Onodera, Hidetoshi

  • Author_Institution
    Grad. Sch. of Inf., Kyoto Univ., Kyoto
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Measured variabilities from 0.35 mum to 90 nm processes are explained with a growing concern of within-die components. Variability impact on circuit performance is discussed. A possible approach for mitigating the variability is the introduction of layout regularity, and its effect is examined by test structures in a 90 nm process and lithography simulation in a 45 nm process.
  • Keywords
    integrated circuit layout; integrated circuit modelling; integrated circuit testing; large scale integration; nanolithography; semiconductor process modelling; LSI design; layout regularity; lithography simulation; size 0.35 micron to 90 nm; test structures; variability modeling; Circuit optimization; Circuit simulation; Circuit testing; Design methodology; Frequency; Informatics; Lithography; MOSFETs; Semiconductor device measurement; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796791
  • Filename
    4796791