DocumentCode
2931724
Title
Discussion of damage induced by trigger pulse at different repetition frequencies in GaAs PCSS´s
Author
Shan, Xiang ; Huiying, Dai
Author_Institution
Dept. of Math. & Phys., Air Force Eng. Univ., Xi´´an, China
fYear
2011
fDate
23-27 Oct. 2011
Firstpage
552
Lastpage
554
Abstract
The paper focuses on the light damage induced by nanosecond laser pulse with 1.06μm wavelength at high repetition frequencies in switch materials by comparing the resistivity values when the switch is on/off, discusses the damage mechanism. Experiment indicates that input laser with different repetition frequencies may cause different temperature rising speeds on the surface material, when the laser repetition frequency less than 1 kHz, the temperature accumulation effect in the material dose not perform significantly, and When the pulse laser is at high repetition frequency, the temperature rising rate in the laser irradiation area gets faster.
Keywords
III-V semiconductors; gallium arsenide; laser beam effects; photoconducting switches; GaAs; PCSS; laser induced damage; laser irradiation area; nanosecond laser pulse; photoconductive semiconductor switch; trigger pulse; wavelength 1.06 mum; Gallium arsenide; Laser theory; Optical switches; Power lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electric Power Equipment - Switching Technology (ICEPE-ST), 2011 1st International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4577-1273-9
Type
conf
DOI
10.1109/ICEPE-ST.2011.6123051
Filename
6123051
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