• DocumentCode
    2931724
  • Title

    Discussion of damage induced by trigger pulse at different repetition frequencies in GaAs PCSS´s

  • Author

    Shan, Xiang ; Huiying, Dai

  • Author_Institution
    Dept. of Math. & Phys., Air Force Eng. Univ., Xi´´an, China
  • fYear
    2011
  • fDate
    23-27 Oct. 2011
  • Firstpage
    552
  • Lastpage
    554
  • Abstract
    The paper focuses on the light damage induced by nanosecond laser pulse with 1.06μm wavelength at high repetition frequencies in switch materials by comparing the resistivity values when the switch is on/off, discusses the damage mechanism. Experiment indicates that input laser with different repetition frequencies may cause different temperature rising speeds on the surface material, when the laser repetition frequency less than 1 kHz, the temperature accumulation effect in the material dose not perform significantly, and When the pulse laser is at high repetition frequency, the temperature rising rate in the laser irradiation area gets faster.
  • Keywords
    III-V semiconductors; gallium arsenide; laser beam effects; photoconducting switches; GaAs; PCSS; laser induced damage; laser irradiation area; nanosecond laser pulse; photoconductive semiconductor switch; trigger pulse; wavelength 1.06 mum; Gallium arsenide; Laser theory; Optical switches; Power lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electric Power Equipment - Switching Technology (ICEPE-ST), 2011 1st International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4577-1273-9
  • Type

    conf

  • DOI
    10.1109/ICEPE-ST.2011.6123051
  • Filename
    6123051