Session 30: Quantum, power, and compound semiconductors devices - heterostructure high-speed devices

This session highlights the recent world record breaking high speed performance achieved with heterostructure FETs and bipolar devices. In the first paper, Massachusetts Institute of Technology presents 30nm gate length enhancement mode InAs HEMTs with world record performance combination of fT (601 GHz) and fmax (609) coupled with low power operation at 0.5 supply voltage. An invited paper from Hong Kong University of Science and Technology presents their pioneering work in the metamorphic growth of high performance InAlAs/InGaAs HEMTs on silicon substrate using MOCVD, suitable for high volume manufacturing. Intel and QinetiQ jointly demonstrate a high performance p-channel HEMT with 40nm physical gate length exploiting record hole mobility with strain engineered quantum well and remote modulation doping, thereby providing a promising option for high-speed complementary III-V logic. In another record setting paper, IHIP Technologies showcases the fastest SiGe HBT based ring-oscillator circuit with 2.5 picosecond delay. Newcastle University achieves extremely high DC current gain of 3,700 incorporating 30% Ge mole fraction in the base in a strained Si/SiGe HBT grown on a virtual substrate. Rochester Institute of Technology in collaboration with Amberwave Systems and University of Notre Dame demonstrates heterogeneous integration of high PVCR InGaAs/GaAs resonant tunnel diodes on silicon using aspect ratio trapping (ART) and Ge buffer layer.