Title :
High performance resistive EHF mixers using InGaAs HEMTs
Author :
Chang, K.W. ; Chen, T.H. ; Bui, S.B.T. ; Liu, L.C.T. ; Nguyen, L.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
The design, fabrication, and testing of a hybrid and a monolithic single-balanced EHF mixer are presented. Very low mixer intermodulation distortion was achieved using a 0.2- mu m*160- mu m pseudomorphic InGaAs high-electron-mobility transistor (HEMT) biased in the resistive mode. Both mixers show similar excellent measured performance. Mixer conversion loss over the 26-29 GHz RF frequency band is about 7-9 dB for DC to 2 GHz IF (intermediate frequency) frequencies. With an LO (local oscillator) power of +13 dBm, the measured input two-tone third-order intercept point is higher than +24 dBm.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; hybrid integrated circuits; indium compounds; intermodulation; mixers (circuits); 26 to 29 GHz; 7 to 9 dB; HEMTs; III-V semiconductors; InGaAs; LO power; conversion loss; hybrid; input two-tone third-order intercept point; mixer intermodulation distortion; monolithic; resistive EHF mixers; Distortion measurement; Fabrication; Frequency conversion; HEMTs; Indium gallium arsenide; Intermodulation distortion; MODFETs; Mixers; Radio frequency; Testing;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188272
