Heterogeneous wafer-scale integration of 250nm, 300GHz InP DHBTs with a 130nm RF-CMOS technology

The performance advantages of InP based devices over silicon devices are well known, but the ability to fabricate complex, high transistor count ICs is limited both by the relative immaturity of the material system and a limited commercial market. Silicon based devices have made significant advances in device performance, but have not yet matched compound semiconductor device performance. A large commercial market, however, has allowed the silicon system to mature and produce billion transistor count ICs in high volume. It would be advantageous to combine the merits of both of these technologies in order to enable a new class of high performance ICs. This work demonstrates the wafer scale integration of an advanced 250 nm, 300 GHz f_T/f_MAX InP DHBT technology with IBM´s 130 nm RF-CMOS technology (CMRF8SF). Such integration allows the rapid adoption of more advanced CMOS and InP DHBT technology generations.