Semiconductor technology choices for ultrawide-band (UWB) systems

Author

Harame, L. ; Wang, X. ; Jagannathan, B. ; Perkarik, J. ; Watts, J. ; Sheridan, D. ; Cottrell, P. ; Greenberg, D. ; Freeman, G. ; Newton, K. ; Graf, M. ; Mina, E. ; Joseph, A. ; Dunn, J.

Author_Institution

IBM Syst. & Technol. Group, Essex Junction, VT, USA

fYear

2005

fDate

5-8 Sept. 2005

Firstpage

725

Lastpage

734

Abstract

UWB 3.1-10.6 GHz frequency and bandwidth impose stringent performance demands of technology. The standard specifications, system architecture, frequency planning, and circuit topology have a major influence on the technology choice. Two technology choices are RFCMOS and SiGe BiCMOS. RFCMOS strongly increases speed and density with scaling, but analog parameters and layout are a concern. RFCMOS designs also require additional devices, sophisticated models and design kits over digital CMOS. SiGe HBTS have fewer device design tradeoffs due to bandgap-engineered vertical transport. Initial systems are system in a package. The low cost favors CMOS.

Keywords

CMOS analogue integrated circuits; germanium compounds; silicon compounds; ultra wideband communication; 3.1 to 10.6 GHz; BiCMOS; RFCMOS; SiGe; UWB systems; circuit topology; frequency planning; semiconductor technology; ultrawideband systems; Bandwidth; BiCMOS integrated circuits; CMOS technology; Circuit topology; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor device modeling; Silicon germanium; Technology planning; CMOS analog integrated circuits; SiGe; millimeter wave bipolar transistor amplifiers; semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband, 2005. ICU 2005. 2005 IEEE International Conference on

Print_ISBN

0-7803-9397-X

Type

conf

DOI

10.1109/ICU.2005.1570078

Filename

1570078