• DocumentCode
    2932108
  • Title

    High Efficiency InxGa1-xN-Based Multi-Junction Photo Voltaic Cells with Concentrator

  • Author

    Islam, Rafiqul ; Hasan, Tanvir ; Rayhan, M.A. ; Bhuiyan, Ashraful G.

  • Author_Institution
    Khulna Univ. of Eng. & Technol. (KUET), Khulna
  • fYear
    2007
  • fDate
    7-9 March 2007
  • Firstpage
    155
  • Lastpage
    158
  • Abstract
    InxGa1-xN has been found to be very potential materials for the fabrication of high efficiency multi-junction (MJ) solar cells. The cost of MJ solar cells composing of III-V materials is higher than that of Si solar cells. To resolve the problem of cost is to employ concentrator systems, which concentrate sunlight with a lens, thereby increasing the intensity of sunlight striking the solar cells. A simulation model is developed which optimizes the design of MJ solar cells with concentrator for high efficiency. An efficiency of about 72.79% is achievable for eight junctions. Also the influence of temperature on efficiency is evaluated. The photocurrent density and open circuit voltage of each junction are calculated under AM 1.5 and it is assumed that each junction absorbs the solar photons that are not absorbed by the preceding one.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; photovoltaic cells; solar absorber-convertors; solar cells; III-V materials; concentrator; multijunction photovoltaic cells; multijunction solar cells; open circuit voltage; photocurrent density; Circuit simulation; Costs; Design optimization; Fabrication; III-V semiconductor materials; Lenses; Optical materials; Photoconductivity; Photovoltaic cells; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information and Communication Technology, 2007. ICICT '07. International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    984-32-3394-8
  • Type

    conf

  • DOI
    10.1109/ICICT.2007.375364
  • Filename
    4261387