DocumentCode
2932108
Title
High Efficiency InxGa1-xN-Based Multi-Junction Photo Voltaic Cells with Concentrator
Author
Islam, Rafiqul ; Hasan, Tanvir ; Rayhan, M.A. ; Bhuiyan, Ashraful G.
Author_Institution
Khulna Univ. of Eng. & Technol. (KUET), Khulna
fYear
2007
fDate
7-9 March 2007
Firstpage
155
Lastpage
158
Abstract
InxGa1-xN has been found to be very potential materials for the fabrication of high efficiency multi-junction (MJ) solar cells. The cost of MJ solar cells composing of III-V materials is higher than that of Si solar cells. To resolve the problem of cost is to employ concentrator systems, which concentrate sunlight with a lens, thereby increasing the intensity of sunlight striking the solar cells. A simulation model is developed which optimizes the design of MJ solar cells with concentrator for high efficiency. An efficiency of about 72.79% is achievable for eight junctions. Also the influence of temperature on efficiency is evaluated. The photocurrent density and open circuit voltage of each junction are calculated under AM 1.5 and it is assumed that each junction absorbs the solar photons that are not absorbed by the preceding one.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photovoltaic cells; solar absorber-convertors; solar cells; III-V materials; concentrator; multijunction photovoltaic cells; multijunction solar cells; open circuit voltage; photocurrent density; Circuit simulation; Costs; Design optimization; Fabrication; III-V semiconductor materials; Lenses; Optical materials; Photoconductivity; Photovoltaic cells; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Information and Communication Technology, 2007. ICICT '07. International Conference on
Conference_Location
Dhaka
Print_ISBN
984-32-3394-8
Type
conf
DOI
10.1109/ICICT.2007.375364
Filename
4261387
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