DocumentCode :
2932108
Title :
High Efficiency InxGa1-xN-Based Multi-Junction Photo Voltaic Cells with Concentrator
Author :
Islam, Rafiqul ; Hasan, Tanvir ; Rayhan, M.A. ; Bhuiyan, Ashraful G.
Author_Institution :
Khulna Univ. of Eng. & Technol. (KUET), Khulna
fYear :
2007
fDate :
7-9 March 2007
Firstpage :
155
Lastpage :
158
Abstract :
InxGa1-xN has been found to be very potential materials for the fabrication of high efficiency multi-junction (MJ) solar cells. The cost of MJ solar cells composing of III-V materials is higher than that of Si solar cells. To resolve the problem of cost is to employ concentrator systems, which concentrate sunlight with a lens, thereby increasing the intensity of sunlight striking the solar cells. A simulation model is developed which optimizes the design of MJ solar cells with concentrator for high efficiency. An efficiency of about 72.79% is achievable for eight junctions. Also the influence of temperature on efficiency is evaluated. The photocurrent density and open circuit voltage of each junction are calculated under AM 1.5 and it is assumed that each junction absorbs the solar photons that are not absorbed by the preceding one.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photovoltaic cells; solar absorber-convertors; solar cells; III-V materials; concentrator; multijunction photovoltaic cells; multijunction solar cells; open circuit voltage; photocurrent density; Circuit simulation; Costs; Design optimization; Fabrication; III-V semiconductor materials; Lenses; Optical materials; Photoconductivity; Photovoltaic cells; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Information and Communication Technology, 2007. ICICT '07. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
984-32-3394-8
Type :
conf
DOI :
10.1109/ICICT.2007.375364
Filename :
4261387
Link To Document :
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