Small-signal RF yield analysis of MMIC circuits based on physical device parameters

A technique is presented for computing the small-signal RF yield of monolithic microwave integrated circuits (MMICs) based on the sensitivity of electrical model parameters to physical device parameters. Because GaAs MMICs are increasingly being used in large-scale production programs, the producibility of a given design must be considered at the beginning of the design process. The technique considered uses commonly measured FET physical parameters in conjunction with electrical parameter sensitivity equations to model both passive and active circuit elements. A linear microwave circuit simulator is then used to compute the RF yield through Monte Carlo analysis. This RF yield analysis method has successfully been applied to several MMIC amplifiers with good results between measured and computed performance.<>