Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

Trap spectroscopy by charge injection and sensing (TSCIS) is a new, fast and powerful material analysis technique that provides detailed information on the trap density profile and trap energy level in dielectric materials. We show the measurement principle and explain the data analysis. The technique is applied to a number of example materials: SiO₂, Al₂O₃, and Si₃N₄. We show that TSCIS has excellent resolution and is capable of distinguishing between different process-variations.