Title :
The observation of trapping and detrapping effects in high-k gate dielectric MOSFETs by a new gate current Random Telegraph Noise (IG-RTN) approach
Author :
Chang, C.M. ; Chung, Steve S. ; Hsieh, Y.S. ; Cheng, L.W. ; Tsai, C.T. ; Ma, G.H. ; Chien, S.C. ; Sun, S.W.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
A new method, called gate current random telegraph noise (IG RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed. Secondly, IG RTN has also been successfully applied to differentiate the difference in electron tunneling mechanism for a device under high-field or low-field stress. Finally, the soft-breakdown (SBD) behavior of a device can be clearly identified. Its IG RTN characteristic is different from that before soft-breakdown. It was found that SBD will indeed induce extra leakage current as a result of an additional breakdown path.
Keywords :
MOSFET; electron traps; high-k dielectric thin films; semiconductor device breakdown; semiconductor device noise; semiconductor device reliability; tunnelling; IG-RTN approach; detrapping effect; electron trapping effect; electron tunneling mechanism; gate current random telegraph noise; high-k gate dielectric MOSFET reliability; oxide quality analysis; soft-breakdown behavior; CMOS technology; Current measurement; Dielectric measurements; Electron traps; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Stress; Telegraphy; Temperature;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796815
