Title :
Development of a C∞-continuous small-signal model for a MOS transistor
Author :
Iniguez, B. ; Moreno, Eugenio García
Author_Institution :
Dept. of Phys., Balearic Islands Univ., Palma de Mallorica, Spain
fDate :
30 May-2 Jun 1994
Abstract :
An explicit and single-piece model for MOSFET´s has been developed. The expressions for the dc current and total charges are C ∞-continuous through all regions of normal operation. The correctness and the advantages of the new model are checked by comparing with HSPICE simulations. Good agreement with the dc and charge models implemented in HSPICE has been found. Besides, the small-signal parameters show smoother transitions between the different regions. Therefore, the advantages of the new model for circuit simulation are demonstrated
Keywords :
MOS integrated circuits; MOSFET; SPICE; circuit analysis computing; digital simulation; semiconductor device models; C∞-continuous small-signal model; HSPICE simulations; MOS transistor; circuit simulation; dc current; single-piece model; small-signal parameters; total charges; Capacitance; Charge carrier density; Circuit simulation; Convergence; Equations; MOSFET circuits; Physics; SPICE; Threshold voltage; Voltage control;
Conference_Titel :
Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-1915-X
DOI :
10.1109/ISCAS.1994.409337
