Highly efficient, very compact GaAs power module for cellular telephone

Author

Ota, Y. ; Yanagihara, M. ; Yokoyama, T. ; Azuma, C. ; Maeda, M. ; Ishikawa, O.

Author_Institution

Matsushita Electric Ind. Co. Ltd., Osaka, Japan

fYear

1992

fDate

1-5 June 1992

Firstpage

1517

Abstract

A highly efficient and very compact power module using GaAs MESFETs has been developed for cellular telephones. The very-high-performance FETs, PPO (poly-phenylene oxide) printed board, and 1005-type chip C/Rs are mounted inside a very small frame of 0.8 cm/sup 3/. The load impedance of the first FET in the module is set at 50 Omega in order to satisfy the stability of the module to prevent oscillation. The typical RF properties of the module are as follows: an output power of 32.3 dBm and a power-added efficiency of 65% at a frequency of 930 MHz, an input power of 7 dBm, an operating voltage of 4.7 V.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; cellular radio; gallium arsenide; modules; packaging; power electronics; power transistors; printed circuits; radiotelephony; telephone sets; 1005-type; 4.7 V; 65 percent; 930 MHz; MESFETs; UHF; cellular telephone; compact GaAs power module; poly-phenylene oxide; power-added efficiency; printed board; FETs; Gallium arsenide; Impedance; MESFETs; Multichip modules; Power generation; Radio frequency; Stability; Telephony; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188302

Filename

188302