Surface-emitting laser for interconnects

Author

Tan, M.R.T. ; Corzine, S.W. ; Schneider, R.P. ; Houng, Y.M. ; Hahn, K.H. ; Huag, T.C. ; Wang, S.Y. ; Dudley, J.

Author_Institution

Hewlett-Packard Co., Palo Alto, CA, USA

fYear

1996

fDate

25 Feb.-1 March 1996

Firstpage

11

Lastpage

12

Abstract

Summary form only given. In conclusion, large-area InGaAs QW surface-emitting lasers are an excellent choice as sources for low-cost multigigabit multimode optical fiber data link applications. Wide spectral width and high-speed operation has been shown for both 980- and 850 nm VCSEL.

Keywords

III-V semiconductors; data communication; gallium arsenide; high-speed optical techniques; indium compounds; laser cavity resonators; optical communication equipment; optical fibre networks; optical interconnections; quantum well lasers; surface emitting lasers; 850 nm; 980 nm; InGaAs; InGaAs QW surface-emitting lasers; VCSEL; high-speed operation; large-area; low-cost multigigabit multimode optical fiber data link applications; optical interconnections; surface-emitting laser; wide spectral width; Gallium arsenide; Laboratories; Light emitting diodes; Mirrors; Optical feedback; Optical superlattices; Reflectivity; Signal analysis; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communications, 1996. OFC '96

Print_ISBN

1-55752-422-X

Type

conf

DOI

10.1109/OFC.1996.907595

Filename

907595