Compact and accurate MOST model for analog circuit hand calculations

Author

Aram, Farbod ; Eshraghi, Aria ; Fiez, Terri

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA

Volume

5

fYear

1994

fDate

30 May-2 Jun 1994

Firstpage

213

Abstract

A simple model for the MOS transistor small-signal drain-source resistance, τ_ds, is presented that accurately predicts analog circuit performance. It is ideal for first-order analog circuit hand calculations. The drain current, I_ds, has exactly the same form as the conventional square-law model. The channel length modulation parameter, X, is modified based on two dimensional analysis to produce a simple model that matches measured devices to within 5% even for short devices

Keywords

CMOS analogue integrated circuits; MOS analogue integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; CMOS IC; MOS IC; MOS transistor; MOSFET; MOST model; analog circuit hand calculations; analog circuit performance prediction; channel length modulation parameter; drain current; small-signal drain-source resistance; two dimensional analysis; Analog circuits; CMOS technology; Computer science; Electric resistance; Equations; Intrusion detection; MOSFET circuits; Predictive models; SPICE; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on

Conference_Location

London

Print_ISBN

0-7803-1915-X

Type

conf

DOI

10.1109/ISCAS.1994.409342

Filename

409342