Title :
Compact and accurate MOST model for analog circuit hand calculations
Author :
Aram, Farbod ; Eshraghi, Aria ; Fiez, Terri
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fDate :
30 May-2 Jun 1994
Abstract :
A simple model for the MOS transistor small-signal drain-source resistance, τds, is presented that accurately predicts analog circuit performance. It is ideal for first-order analog circuit hand calculations. The drain current, Ids, has exactly the same form as the conventional square-law model. The channel length modulation parameter, X, is modified based on two dimensional analysis to produce a simple model that matches measured devices to within 5% even for short devices
Keywords :
CMOS analogue integrated circuits; MOS analogue integrated circuits; MOSFET; integrated circuit modelling; semiconductor device models; CMOS IC; MOS IC; MOS transistor; MOSFET; MOST model; analog circuit hand calculations; analog circuit performance prediction; channel length modulation parameter; drain current; small-signal drain-source resistance; two dimensional analysis; Analog circuits; CMOS technology; Computer science; Electric resistance; Equations; Intrusion detection; MOSFET circuits; Predictive models; SPICE; Voltage;
Conference_Titel :
Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on
Conference_Location :
London
Print_ISBN :
0-7803-1915-X
DOI :
10.1109/ISCAS.1994.409342
