DocumentCode
2932329
Title
L-band phase shifter with switching FET´s for phased array antenna
Author
Kato, T. ; Tanaka, Y. ; Ueda, H. ; Kano, H. ; Hashimoto, M.
Author_Institution
Toyota Central R&D Labs. Inc., Aichi, Japan
fYear
1992
fDate
1-5 June 1992
Firstpage
1527
Abstract
An L-band 3-b phase shifter was developed with switching GaAs MESFETs. To get a simple and low-loss phase shifter, the switching performance of the FET is improved. The FET has an on-state resistance of 1.5 Omega as a result of optimizing device structures. Using a phase shift circuit consisting of the FET and a short stub causes the phase shifter insertion loss to become 1.7+or-0.2 dB over the range of 1540-1660 MHz. A phased array antenna was also developed with the phase shifter.<>
Keywords
Schottky gate field effect transistors; antenna accessories; antenna phased arrays; microwave antenna arrays; phase shifters; solid-state microwave circuits; 1540 to 1660 MHz; GaAs; L-band; UHF; insertion loss; low-loss; phase shifter; phased array antenna; switching GaAs MESFETs; Antenna arrays; FETs; Gallium arsenide; Insertion loss; L-band; MESFETs; Optical reflection; Phase shifters; Phased arrays; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188305
Filename
188305
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