Novel model for cell - system interaction (MCSI) in NAND Flash

Author

Friederich, C. ; Hayek, J. ; Kux, A. ; Müller, T. ; Chan, N. ; Köbernik, G. ; Specht, M. ; Richter, D. ; Schmitt-Landsiedel, D.

Author_Institution

Inst. for Tech. Electron., Tech. Univ. Munich, Munich

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

For the first time a stochastic model of the program operation in NAND flash memories is proposed. The model incorporates intrinsic noise effects on the threshold voltage (Vth) distribution of the memory cells in incremental step pulse programming (ISPP) schemes. An excellent agreement of the model with experimental data at 48 nm ground rule is demonstrated. This model for cell-system interaction (MCSI) directly makes the link between memory transistor properties and memory system characteristics. It enables efficient algorithm development as well as evaluation of device concepts for future technology nodes with regard to the expected memory system performance and reliability.

Keywords

NAND circuits; flash memories; stochastic processes; NAND flash memories; incremental step pulse programming schemes; intrinsic noise effects; memory cells; model for cell-system interaction; stochastic model; threshold voltage distribution; Algorithm design and analysis; Capacitance; Electrons; Noise level; Nonvolatile memory; Physics; Probability density function; Statistical distributions; Technological innovation; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796826

Filename

4796826