Accuracy improvements in two-port noise parameter extraction method

Author

Boudiaf, A. ; LaPorte, M. ; Dangla, J. ; Vernet, G.

fYear

1992

fDate

1-5 June 1992

Firstpage

1569

Abstract

A simple method for the determination of the two-port noise parameters is presented. It is a weighted least squares regression, where the weights are a function of the measurement uncertainties. This method fits the best minimum noise figure and noise equivalent resistance, which are the most sensitive noise parameters. A more rapid convergence and a better accuracy are demonstrated with this new method by using a reduced number of reflection coefficient states than with the method of M. Mitama and H. Katoh (1979). In order to prove that it is possible to reduce the error effect on the noise parameter extraction by choosing the right fitting algorithm, simulation software that allows the test and comparison of the different methods was developed. Experimental results are presented for a 0.25- mu m HEMT (high-electron-mobility transistor).<>

Keywords

electric noise measurement; measurement theory; microwave measurement; random noise; semiconductor device noise; semiconductor device testing; solid-state microwave devices; convergence; error effect; fitting algorithm; minimum noise figure; noise equivalent resistance; reflection coefficient states; simulation software; two-port noise parameter extraction; weighted least squares regression; Acoustic reflection; Convergence; HEMTs; Least squares methods; Measurement uncertainty; Noise figure; Noise reduction; Parameter extraction; Software algorithms; Software testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188316

Filename

188316