DocumentCode
2932520
Title
Direct use of a MESFET physical model, in nonlinear CAD
Author
Rodrigues, Paulo J C ; Howes, Michael J. ; Richardson, John R.
Author_Institution
Dept. de Engenharia Eletrica, Brasilia Univ., Brazil
fYear
1992
fDate
1-5 June 1992
Firstpage
1579
Abstract
The authors present a CAD (computer-aided design) tool which combines a novel quasi-two-dimensional MESFET physical model with an efficient nonlinear circuit analysis technique. Device technological parameters (dimensions, doping profile, etc.) can be directly related to electrical performance with this tool, which can therefore be used in nonlinear circuit yield study and optimization. An excellent agreement between simulated and measured results was obtained.<>
Keywords
Schottky gate field effect transistors; circuit CAD; circuit analysis computing; nonlinear network analysis; semiconductor device models; solid-state microwave devices; MESFET physical model; circuit yield; computer-aided design; electrical performance; nonlinear CAD; nonlinear circuit analysis; optimization; quasi 2D model; technological parameters; Availability; Circuit analysis; Circuit simulation; Doping profiles; Electrons; MESFET circuits; Nonlinear equations; Poisson equations; Semiconductor process modeling; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188319
Filename
188319
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