Title :
Direct use of a MESFET physical model, in nonlinear CAD
Author :
Rodrigues, Paulo J C ; Howes, Michael J. ; Richardson, John R.
Author_Institution :
Dept. de Engenharia Eletrica, Brasilia Univ., Brazil
Abstract :
The authors present a CAD (computer-aided design) tool which combines a novel quasi-two-dimensional MESFET physical model with an efficient nonlinear circuit analysis technique. Device technological parameters (dimensions, doping profile, etc.) can be directly related to electrical performance with this tool, which can therefore be used in nonlinear circuit yield study and optimization. An excellent agreement between simulated and measured results was obtained.<>
Keywords :
Schottky gate field effect transistors; circuit CAD; circuit analysis computing; nonlinear network analysis; semiconductor device models; solid-state microwave devices; MESFET physical model; circuit yield; computer-aided design; electrical performance; nonlinear CAD; nonlinear circuit analysis; optimization; quasi 2D model; technological parameters; Availability; Circuit analysis; Circuit simulation; Doping profiles; Electrons; MESFET circuits; Nonlinear equations; Poisson equations; Semiconductor process modeling; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188319
