Electron transport in Gate-All-Around uniaxial tensile strained-Si nanowire n-MOSFETs

Author

Hashemi, Pouya ; Gomez, Leonardo ; Canonico, Michael ; HOyt, Judy L.

Author_Institution

MIT Microsyst. Technol. Labs., Cambridge, MA

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The intrinsic performance and electron effective mobility of uniaxially strained-Si gate-all-around (GAA) NanoWire (NW) n-MOSFETs are investigated, for the first time. Suspended strained-Si NWs show very high stress (up to ~2.1 GPA) as confirmed by Raman, with no bending of the wires. GAA strained-Si NW n-MOSFETs exhibit excellent subthreshold swing, and current drive and transconductance enhancement of ~2X over unstrained Si control NW devices. The mobility enhancement of these devices over unstrained planar and GAA MOSFETs as well as their scalability to circular NWs with radius of ~4 nm are also demonstrated.

Keywords

MOSFET; electron mobility; elemental semiconductors; internal stresses; nanowires; silicon; MOSFET; Si; current drive; electron effective mobility; electron transport; gate-all-around nanowire; mobility enhancement; subthreshold swing; transconductance; uniaxial tensile strained; Electron mobility; Electrostatics; Fabrication; Insulation; Laboratories; MOSFET circuits; Nanoscale devices; Silicon on insulator technology; Substrates; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796835

Filename

4796835