Session 36: Modeling and simulation enhanced mobility and III-V devices

The six papers in this session address performance limits and transport characteristics of devices on strained and III-V substrates. The session begins with a paper by Oh and Wong from Stanford. They discuss a physics-based compact model for heterostructure devices. Luisier and colleagues from Purdue next apply an advanced transport model to InAs HEMTs. Finally, an NEGF analysis for InGaAs DGFETs by Pal, Low, and Lundstrom is presented. Strain effects in group IV devices are the subject of the second half of the session. First, Pham and colleagues at Braunschweig Technical University employ multisubband simulation for strained DG PFET including magnetic effects. Results of a collaboration between Stanford, Braunschweig, and Intel that deal with the effect of orientation and strain on Ge and Si DG PFET´s are presented next by Krishnamohan et al., Finally, Shi, Register and Banerjee from University of Texas Austin analyze strained, deeply scaled NFETs using quantum-scorrected Monte Carlo methods.