Title :
35 GHz and 60 GHz low noise HEMT MMIC amplifiers for civil applications
Author :
Bourne, P. ; Arsene-Henry, P. ; Fellon, P. ; Pons, D.
Author_Institution :
Thomson Composants Microondes, Orsay, France
Abstract :
Monolithic HEMT (high-electron-mobility-transistor) low-noise amplifiers have been developed for civil applications at Q and V bands. They consist of two-stage amplifiers with 0.25- mu m HEMTs. At 35 GHz and 60 GHz, they exhibit, respectively, more than 15 dB of gain with 4-dB noise figure and 12.5-dB gain with a noise figure between 5 and 6 dB over a 10% frequency range. Experimental results show high performance and high yield ( approximately=80%) (no critical elements) and indicate suitability for civil low-cost applications. During the design, a special effort was made to improve the stabilization of low-noise amplifiers at low frequencies, by damping with RC circuits and the associated bonding wire. This is essential for its integration in a whole module.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; stability; 0.25 micron; 12.5 dB; 15 dB; 35 GHz; 4 to 6 dB; 60 GHz; EHF; LNA; MIMIC; MM-wave type; MMIC amplifiers; Q-band; RC circuits; V-band; civil applications; high-electron-mobility-transistor; low noise HEMT; low-cost applications; low-noise amplifiers; stabilization; two-stage amplifiers; Bonding; Circuits; Damping; Frequency; Gain; HEMTs; Low-noise amplifiers; MMICs; Noise figure; Wire;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188329