35 GHz and 60 GHz low noise HEMT MMIC amplifiers for civil applications

Author

Bourne, P. ; Arsene-Henry, P. ; Fellon, P. ; Pons, D.

Author_Institution

Thomson Composants Microondes, Orsay, France

fYear

1992

fDate

1-5 June 1992

Firstpage

1613

Abstract

Monolithic HEMT (high-electron-mobility-transistor) low-noise amplifiers have been developed for civil applications at Q and V bands. They consist of two-stage amplifiers with 0.25- mu m HEMTs. At 35 GHz and 60 GHz, they exhibit, respectively, more than 15 dB of gain with 4-dB noise figure and 12.5-dB gain with a noise figure between 5 and 6 dB over a 10% frequency range. Experimental results show high performance and high yield ( approximately=80%) (no critical elements) and indicate suitability for civil low-cost applications. During the design, a special effort was made to improve the stabilization of low-noise amplifiers at low frequencies, by damping with RC circuits and the associated bonding wire. This is essential for its integration in a whole module.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; stability; 0.25 micron; 12.5 dB; 15 dB; 35 GHz; 4 to 6 dB; 60 GHz; EHF; LNA; MIMIC; MM-wave type; MMIC amplifiers; Q-band; RC circuits; V-band; civil applications; high-electron-mobility-transistor; low noise HEMT; low-cost applications; low-noise amplifiers; stabilization; two-stage amplifiers; Bonding; Circuits; Damping; Frequency; Gain; HEMTs; Low-noise amplifiers; MMICs; Noise figure; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188329

Filename

188329