Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport

The authors present, for the first time, deterministic 2D multisubband device simulations based on the self consistent solution of SE-PE-BTE for PMOSFETs including the Pauli principle, magnetic fields, and without any simplification of the subband structure. The deterministic method yields truly stationary solutions and can resolve small changes in the solution due to magnetic fields or small changes in the bias conditions. The magnetoresistance mobility extraction method is investigated and compared to the conventional mobility extraction technique for short channel devices.