Deterministic multisubband device simulations for strained double gate PMOSFETs including magnetotransport

Author

Pham, A.T. ; Jungemann, C. ; Meinerzhagen, B.

Author_Institution

Tech. Univ. Braunschweig, Braunschweig

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The authors present, for the first time, deterministic 2D multisubband device simulations based on the self consistent solution of SE-PE-BTE for PMOSFETs including the Pauli principle, magnetic fields, and without any simplification of the subband structure. The deterministic method yields truly stationary solutions and can resolve small changes in the solution due to magnetic fields or small changes in the bias conditions. The magnetoresistance mobility extraction method is investigated and compared to the conventional mobility extraction technique for short channel devices.

Keywords

MOSFET; magnetic fields; magnetoresistance; SE-PE-BTE; deterministic multisubband device simulations; magnetic fields; magnetoresistance mobility extraction; magnetotransport; short channel devices; strained double gate PMOSFET; Anisotropic magnetoresistance; Lattices; MOSFETs; Magnetic devices; Magnetic fields; Nonlinear equations; Poisson equations; Scattering; Stress; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796844

Filename

4796844