Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

Author

Krishnamohan, Tejas ; Kim, Donghyun ; Dinh, Thanh Viet ; Pham, Anh-Tuan ; Meinerzhagen, Bernd ; Jungemann, Christoph ; Saraswat, Krishna

Author_Institution

Stanford Univ., Stanford, CA

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), self-consistent Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of surface/channel orientation, uniaxial- and biaxial-strain, band-structure, mobility, and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, strained-Si and strained-Ge, p-MOS DGFETs have been presented and the optimum strain and channel/surface orientations for highest drive-lowest delay-lowest leakage have been obtained.

Keywords

MOSFET; Monte Carlo methods; circuit simulation; germanium; hole mobility; silicon; Ge; Monte-Carlo simulations; PMOS DGFET; Poisson-Schrodinger simulation; Si; Si (001); Si (110); Si (111); band-to-band-tunneling simulation; drive current; mobility enhancement; off-state leakage; Capacitive sensors; Delay effects; Effective mass; Electronic mail; Electrostatics; MOSFET circuits; Photonic band gap; Silicon; Tensile strain; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796845

Filename

4796845