Application of spin-torque diode effect to the analysis of spin-transfer switching in MgO-based magnetic tunnel junctions

Author

Kubota, H. ; Fukushima, A. ; Ootani, Y. ; Yuasa, S. ; Ando, K. ; Maehara, H. ; Tsunekawa, K. ; Djayaprawira, D.D. ; Watanabe, N. ; Suzuki, Y.

Author_Institution

Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2006

fDate

8-12 May 2006

Firstpage

1

Lastpage

1

Abstract

Multilayers of buffer/Pt-Mn/Co-Fe/Ru/Co₆₀Fe₂₀B₂₀ (3.2 nm)/Mg (0.4 nm)/MgO (0.6 nm)/ Co₆₁Fe₇Ni₁₅B₁₅ (3 nm)/Ta/Ru is prepared on thermally oxidized Si substrates by UHV sputtering system (ANELVA C7100). The free layer Co-Fe-Ni-B has low magnetostriction, which is important characteristics for MRAM with high endurance for write/erase cycles. After annealing at 330degC, the film was patterned into 80 nm x 170 nm ellipsoids. The observed R-Hcurves showed sharp switching between low and high resistance states. The MR ratio was about 80% and resistance-area product was about 2 Omegam². STS effect for MTJ is applied to evaluate the spin-transfer switching.

Keywords

annealing; boron alloys; cobalt; cobalt alloys; iron; iron alloys; magnesium; magnesium compounds; magnetic multilayers; magnetic switching; manganese; nickel alloys; platinum; ruthenium; silicon; tantalum; tunnelling magnetoresistance; Co₆₀Fe₂₀B₂₀-MgO-Co₆₁Fe₇Ni₁₅B₁₅-Si; CoFe; PtMn; R-H curves; Si; UHV sputtering system; annealing; buffer layer; magnetic tunnel junctions; magnetoresistance ratio; multilayers; spin-torque diode effect; spin-transfer switching; thermally oxidized substrates; Annealing; Diodes; Iron; Magnetic analysis; Magnetic multilayers; Magnetic switching; Magnetic tunneling; Magnetostriction; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375410

Filename

4261435