Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

Author

Hayakawa, J. ; Ikeda, S. ; Lee, Y. ; Sasaki, R. ; Matsukura, F. ; Meguro, T. ; Takahashi, H. ; Ohno, H.

Author_Institution

Hitachi Adv. Res. Lab., Sendai

fYear

2006

fDate

8-12 May 2006

Firstpage

6

Lastpage

6

Abstract

The current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with various free layer materials including synthetic structure was studied in this paper. The MTJ films were deposited on SiO₂/Si substrates using RF magnetron sputtering. The tunnel magnetoresistance (TMR) ratios and current-voltage (I-V) characteristics of the the MTJs were measured at room temperature using a dc four-probe method and with a magnetic field of up to 1 kOe. The TMR ratio and the current-driven magnetization switching at critical current densities were shown as a function of annealing temperature for two types of MTJs with different free layer.

Keywords

boron alloys; cobalt alloys; current density; iron alloys; magnesium compounds; magnetic switching; magnetisation; tunnelling magnetoresistance; SiO₂-Si; SiO₂/Si substrates; TMR; annealing; critical current density; current-driven magnetization switching; current-voltage characteristics; dc four-probe method; free layer materials; magnetic field; magnetic tunnel junctions; temperature 293 K to 298 K; tunnel magnetoresistance; Magnetic field measurement; Magnetic films; Magnetic materials; Magnetic switching; Magnetic tunneling; Magnetization; Radio frequency; Semiconductor films; Temperature measurement; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375415

Filename

4261440