DocumentCode
2933173
Title
A 920-1650-nm high-current photodiode
Author
Davis, G.A. ; Weiss, R.E. ; LaRue, R.A. ; Williams, K.J. ; Esman, R.D.
Author_Institution
Intevac ATD, Palo Alto, CA, USA
fYear
1996
fDate
25 Feb.-1 March 1996
Firstpage
69
Lastpage
70
Abstract
Summary form only given. In this paper we describe an InGaAs-based photodiode, which has demonstrated continuous 140-mA output current at 2-W power dissipation with 0.97-A/W conversion efficiency at 1320 nm.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; photodiodes; 1320 nm; 140 mA; 2 W; 920 to 1650 nm; IR detectors; InGaAs; InGaAs-based photodiode; W power dissipation; conversion efficiency; mA output current; nm high-current photodiode; Detectors; Doped fiber amplifiers; Frequency; Laser tuning; Optical distortion; Phase modulation; Photodiodes; Power dissipation; Quantum well lasers; Ring lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications, 1996. OFC '96
Print_ISBN
1-55752-422-X
Type
conf
DOI
10.1109/OFC.1996.907650
Filename
907650
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