Title :
LLG simulation of MRAM switching rates
Author :
Visscher, P.B. ; Wang, S.
Author_Institution :
Alabama Univ., Tuscaloosa
Abstract :
In this paper we describe a new method for computing rates by LLG (Landau-Lifshitz-Gilbert) simulation, and also show that the simple transition state theory (TST) approximation is not only very accurate. The problem of calculating MRAM switching rates has been well-studied for the case of thermal switching in uniaxial particles, mostly by solution of the Fokker-Planck (FP) equation for a non-steady state system.
Keywords :
Fokker-Planck equation; random-access storage; Fokker-Planck equation; Landau-Lifshitz-Gilbert simulation; MRAM switching rates; nonsteady state system; thermal switching; transition state theory approximation; Computational modeling; Damping; Equations; Magnetic switching; Magnetization; Orbits; Physics; Potential well; Switches; Transistors;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375534
