Title :
90nm WAl2O3TiWCu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
Author :
Belmonte, A. ; Kim, Wonhee ; Chan, Britney ; Heylen, Nancy ; Fantini, Andrea ; Houssa, M. ; Jurczak, Malgorzata ; Goux, L.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this paper we demonstrate excellent memory performances of a 90nm CMOS-friendly WAl2O3TiWCu CBRAM cell integrated in a 1T1R configuration and withstanding the back-end of line thermal budget of 400°C. The cell exhibits low-power and highly controlled set and reset operations, allowing reversible multilevel programming controlled by both the set current and the reset voltage. Low-voltage (<;3V) operation is obtained down to 10ns-long write pulse both for set and reset, and allowing >106 write endurance with a 2-decade memory window. State stability is assessed up to 125°C. Moreover, due to low slope of the voltage-log(time) relationship the cell also shows excellent voltage-disturb immunity assessed up to +/-0.5V and extrapolated to 10 years.
Keywords :
CMOS memory circuits; alumina; copper; random-access storage; stability; titanium compounds; tungsten; 1T1R CBRAM cell; 2-decade memory window; CMOS; W-Al2O3-TiW-Cu; disturb-free operation; line thermal budget; low-voltage operation; reversible multilevel programming; size 90 nm; state stability; temperature 400 degC; time 10 ns; voltage-disturb immunity; voltage-log relationship; Aluminum oxide; Programming; Random access memory; Resistance; Switches; Thermal stability; CBRAM; Conductive-bridging; ECM; high performance memory; low-power memory; memory disturb;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582089
