DocumentCode
2933589
Title
A single-chip CMOS linear power amplifier for ISM-band application
Author
Du, Chunshan ; Liu, Zhangfa
Author_Institution
Beijing JiaoTong Univ., Beijing
fYear
2007
fDate
Nov. 28 2007-Dec. 1 2007
Firstpage
458
Lastpage
461
Abstract
A low-voltage CMOS linear power amplifier (PA) is presented for 2.4 GHz ISM-band short range wireless communication in this paper. All the inductors in the circuit are bonding-wire inductors and the capacitors are MIM capacitors. A novel adaptive biasing is used at the output stage, which dramatically increases the linear output power range as well as decreases the power dissipation at lower output power level. Grounding strategy is also considered to make the PA stable in all process corners. The PA is a two-stage configuration and is implemented in 0.35 mum 3.3 V CMOS process. The spectreRF simulation results show that the PA can deliver +25.2 dBm of linear output power with a power gain of higher than 29 dB in -4 dBm input power range.
Keywords
CMOS analogue integrated circuits; MIM devices; UHF power amplifiers; earthing; power inductors; thin film capacitors; thin film inductors; ISM-band; MIM capacitors; bonding-wire inductors; grounding strategy; low-voltage power amplifier; short range wireless communication; single-chip CMOS linear power amplifier; spectreRF simulation; Bonding; CMOS process; Circuits; Grounding; Inductors; MIM capacitors; Power amplifiers; Power dissipation; Power generation; Wireless communication; CMOS power amplifier; Low-voltage power amplifier; adaptive biasing; linear power amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent Signal Processing and Communication Systems, 2007. ISPACS 2007. International Symposium on
Conference_Location
Xiamen
Print_ISBN
978-1-4244-1447-5
Electronic_ISBN
978-1-4244-1447-5
Type
conf
DOI
10.1109/ISPACS.2007.4445923
Filename
4445923
Link To Document