DocumentCode
2933603
Title
Highly reliable ReRAM technology with encapsulation process for 20nm and beyond
Author
Dong-Jun Seong ; Min Kyu Yang ; Hyunsu Ju ; Jung Moo Lee ; Eunmi Kim ; Seungjae Jung ; Jinwoo Lee ; Gun Hwan Kim ; Seol Choi ; Lijie Zhang ; Seong-Geon Park ; Youn Seon Kang ; In-Gyu Baek ; Jungdal Choi ; Ho-Kyu Kang ; EunSeung Jung
Author_Institution
Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung, South Korea
fYear
2013
fDate
26-29 May 2013
Firstpage
42
Lastpage
43
Abstract
ReRAM cell performance and reliability have been improved through process optimization. Encapsulated ReRAM cell with SiN capping layer shows excellent endurance, read disturb, and retention characteristics. We demonstrated that effective oxygen barrier encapsulation is critical for keeping ReRAM performance in an aggressively scaled technology node.
Keywords
encapsulation; integrated circuit reliability; random-access storage; silicon compounds; ReRAM cell performance; ReRAM technology; SiN; SiN capping layer; encapsulation process; oxygen barrier encapsulation; process optimization; reliability; scaled technology node; size 20 nm; Degradation; Encapsulation; Oxidation; Performance evaluation; Reliability; Resistance; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4673-6168-2
Type
conf
DOI
10.1109/IMW.2013.6582093
Filename
6582093
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