Simulation of polarity independent RESET in electrochemical metallization memory cells

Redox-based resistive switching devices are a potential candidate for future non-volatile memory. One type of these devices is the electrochemical metallization cell (ECM), which typically exhibit a bipolar operation scheme. However, at high current levels a transition to polarity independent RESET switching has been observed. This work presents a numerical simulation model of the RESET operation in ECM cells, which is capable of explaining the occurrence of polarity-independent RESET switching. The model is based on the thermally activated electrochemical dissolution of a conducting filament.