Title :
Monolithic integration of a Michelson all-optical wavelength converter
Author :
Ratovelomanana, F. ; Vodjdani, N. ; Enard, A. ; Glastre, G. ; Rondi, D. ; Blondeau, R. ; Jourdan, A.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fDate :
25 Feb.-1 March 1996
Abstract :
Summary form only given. The Michelson-interferometer/semiconductor optical amplifier monolithic integration is based on the buried-stripe-loaded waveguide structure on InP-GaInAsP. The passive waveguide is 4° tilted from the device endface. The Y-junction aperture angle is of 1.5°. Each amplifier is 1200-micron long.
Keywords :
III-V semiconductors; Michelson interferometers; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical communication equipment; semiconductor lasers; waveguide lasers; wavelength division multiplexing; 1200 micron; InP-GaInAsP; Michelson all-optical wavelength converter; Michelson-interferometer; WDM; Y-junction aperture angle; buried-stripe-loaded waveguide structure; device endface; monolithic integration; passive waveguide; semiconductor optical amplifier; Erbium; Indium phosphide; Monolithic integrated circuits; Optical amplifiers; Optical interferometry; Optical sensors; Optical waveguides; Optical wavelength conversion; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Optical Fiber Communications, 1996. OFC '96
Print_ISBN :
1-55752-422-X
DOI :
10.1109/OFC.1996.907698
