Characteristics of magnetic tunnel junctions comprising ferromagnetic amorphous NiFeSiB layers

Author

Rhee, J. ; Chun, B. ; Hwang, J. ; Yim, H. ; Kim, T. ; Kim, Y.

fYear

2006

fDate

8-12 May 2006

Firstpage

73

Lastpage

73

Abstract

In this study, we investigated that both magnetic switching and tunneling magnetoresistance (TMR) ratio of MTJs with the NiFeSiB free layer. The junctions were fabricated by a photolithographic patterning procedure and ion beam etching. A magnetic field of 100 Oe was applied during deposition to induce the uniaxial magnetic anisotropy in ferromagnetic layer.The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. Ni₁₆Fe₆₂Si₈B₁₄ has a lower saturation magnetization (Ms: 800 emu/cm3) than Co₉₀Fe₁₀ and a higher anisotropy constant.

Keywords

boron alloys; ferromagnetic materials; iron alloys; magnetic anisotropy; magnetic switching; magnetisation; nickel alloys; silicon alloys; sputter etching; tunnelling magnetoresistance; NiFeSiB; TMR; ferromagnetic amorphous layers; ion beam etching; magnetic field; magnetic switching; magnetic tunnel junctions; photolithographic patterning procedure; saturation magnetization; tunneling magnetoresistance; uniaxial magnetic anisotropy; Amorphous materials; Anisotropic magnetoresistance; Etching; Ion beams; Iron; Magnetic anisotropy; Magnetic switching; Magnetic tunneling; Saturation magnetization; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375573

Filename

4261507