Self-rectifying bistable resistor for advanced memory application

Author

Lv, H.B. ; Liu, Quanwei ; Li, Y.T. ; Wang, Michael ; Liu, X.Y. ; Sun, H.T. ; Xie, H.W. ; Yang, X.Y. ; Huo, Z.L. ; Long, S.B. ; Liu, Minggang

Author_Institution

Laborarory of Nano-Nabrication & Novel Devices Integrated Technol., Inst. of Microelectron., Beijing, China

fYear

2013

fDate

26-29 May 2013

Firstpage

182

Lastpage

183

Abstract

A self-rectifying bistable resistor named SR-biristor with capacitor-like MIM structure is presented for selector free, high density, low cost memory application. Stable hysteric I-V characteristics are utilized for data storage. The device exhibits following outstanding advantages: 1. Simple device structure with MIM configuration; 2. CMOS compatible processes and materials; 3. Self-rectifying and multi-stackable, 4. Excellent cycle-to-cycle and device-to-device uniformity; 5. Fast program/erase speed (30 ns/30 ns); 6. Satisfactory switching endurance (> 10⁹ cycles).

Keywords

CMOS memory circuits; MIM structures; rectifying circuits; resistors; CMOS compatible materials; CMOS compatible process; MIM configuration; SR-biristor; advanced memory application; capacitor-like MIM structure; cycle-to-cycle uniformity; data storage; device-to-device uniformity; hysteric I-V characteristics; program-erase speed; self-rectifying bistable resistor; CMOS integrated circuits; Decoding; Memory; Performance evaluation; Resistance; Resistors; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2013 5th IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6168-2

Type

conf

DOI

10.1109/IMW.2013.6582129

Filename

6582129