• DocumentCode
    2934268
  • Title

    Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

  • Author

    Kim, Youngjae ; Chun, Byung-Kwan ; Kim, Dongkyu ; Hwang, Jae-Sang ; Kim, Sungho ; Rhee, June-Koo ; Kim, T.

  • Author_Institution
    Korea Univ., Seoul
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    74
  • Lastpage
    74
  • Abstract
    The bias voltage dependence of tunneling magnetoresistance (TMR) for double barrier magnetic tunnel junction (DMTJ) CoFe/NiFeSiB/CoFe is investigated. The microstructure of the hybrid free layered DMTJs was examined by HRTEM.
  • Keywords
    boron alloys; cobalt alloys; ferromagnetic materials; iron alloys; nickel alloys; silicon alloys; transmission electron microscopy; tunnelling magnetoresistance; CoFe-NiFeSiB-CoFe; TEM; TMR; bias voltage dependence; double barrier magnetic tunnel junction; hybrid free layered tunnel junction; microstructure; tunneling magnetoresistance; Amorphous magnetic materials; Amorphous materials; Electrons; Magnetic anisotropy; Magnetic tunneling; Materials science and technology; Perpendicular magnetic anisotropy; Physics; Tunneling magnetoresistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375574
  • Filename
    4261508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2934268