B4-Flash Memory with one million cycling endurance - Suitable for extremely high end SSD applications -

Author

Shukuri, S. ; Katsumata, M. ; Shimizu, Shogo ; Ajika, N. ; Ogura, Tsuneo ; Miyagawa, Hiroki ; Kasuta, Y. ; Kobayashi, Kaoru ; Nakashima, Masahiro

Author_Institution

GENUSION, Inc., Amagasaki, Japan

fYear

2013

fDate

26-29 May 2013

Firstpage

196

Lastpage

198

Abstract

This paper describes million cycling capability of B4-Flash (Back Bias assisted Band-to-Band tunneling induced Hot Electron injection Flash) memory with sufficient data retention characteristics, evaluated by mega bit level statistics using actual 512Mb chips. 512Mb B4-Flash chips fabricated by 90nm process have been confirmed its excellent million cycling endurance without fatal degradation of program/erase performances. Retention capability after one million-cycling has been also evaluated and confirmed that B4-Flash has achieved sufficient retention characteristics for high cycling SSD with long term data retention applications, much superior to JEDEC standard criterion. These results show its suitability and applicability of B4-Flash to high end Tier0 class SSDs (Solid State Drives).

Keywords

flash memories; hot electron transistors; tunnelling; B4-flash memory; JEDEC standard criterion; back bias assisted band-to-band tunneling induced hot electron injection; cycling endurance; data retention characteristics; fatal degradation; high end Tier0 class SSD application; program/erase performances; size 90 nm; Degradation; Drives; Flash memories; Memory management; Reliability; Standards; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2013 5th IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6168-2

Type

conf

DOI

10.1109/IMW.2013.6582133

Filename

6582133