A scalable, low voltage, low cost SONOS memory technology for embedded NVM applications

Author

Ramkumar, Kannan ; Kouznetsov, I. ; Prabhakar, V. ; Shakeri, K. ; Yu, Xiaoyuan ; Yang, Yi ; Hinh, L. ; Lee, Sang-Rim ; Samanta, Suranjana ; Shih, H.M. ; Geha, S. ; Shih, Patrick C. ; Huang, C.C. ; Lee, Hee Chul ; Wu, S.H. ; Gau, J.H. ; Sheu, Y.K.

Author_Institution

Cypress Semicond., San Jose, CA, USA

fYear

2013

fDate

26-29 May 2013

Firstpage

199

Lastpage

202

Abstract

A novel low cost, eNVM technology is presented which has the lowest program/erase voltage reported to date. It is based on the integration of a SONOS based NVM module into a foundry CMOS process with only 3 additional masks and no additional HV oxide. An optimized integration scheme ensures that the CMOS device parameters of the eNVM process are closely matched to baseline process. Even with the low 7.5V program/erase voltage, excellent reliability has been demonstrated meeting automotive data retention requirements and 100k cycle endurance on a 4.5Mbit flash memory macro.

Keywords

CMOS memory circuits; flash memories; foundries; low-power electronics; random-access storage; SONOS memory technology; automotive data retention; eNVM technology; embedded NVM; flash memory; foundry CMOS process; voltage 7.5 V; CMOS integrated circuits; Computer architecture; Implants; Logic gates; Microprocessors; Nonvolatile memory; SONOS devices; NVM; Reliability; SONOS; embedded;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2013 5th IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4673-6168-2

Type

conf

DOI

10.1109/IMW.2013.6582134

Filename

6582134