Title :
A scalable, low voltage, low cost SONOS memory technology for embedded NVM applications
Author :
Ramkumar, Kannan ; Kouznetsov, I. ; Prabhakar, V. ; Shakeri, K. ; Yu, Xiaoyuan ; Yang, Yi ; Hinh, L. ; Lee, Sang-Rim ; Samanta, Suranjana ; Shih, H.M. ; Geha, S. ; Shih, Patrick C. ; Huang, C.C. ; Lee, Hee Chul ; Wu, S.H. ; Gau, J.H. ; Sheu, Y.K.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Abstract :
A novel low cost, eNVM technology is presented which has the lowest program/erase voltage reported to date. It is based on the integration of a SONOS based NVM module into a foundry CMOS process with only 3 additional masks and no additional HV oxide. An optimized integration scheme ensures that the CMOS device parameters of the eNVM process are closely matched to baseline process. Even with the low 7.5V program/erase voltage, excellent reliability has been demonstrated meeting automotive data retention requirements and 100k cycle endurance on a 4.5Mbit flash memory macro.
Keywords :
CMOS memory circuits; flash memories; foundries; low-power electronics; random-access storage; SONOS memory technology; automotive data retention; eNVM technology; embedded NVM; flash memory; foundry CMOS process; voltage 7.5 V; CMOS integrated circuits; Computer architecture; Implants; Logic gates; Microprocessors; Nonvolatile memory; SONOS devices; NVM; Reliability; SONOS; embedded;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582134
