Title :
Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling
Author :
Chao-Wei Kuo ; Chia-Jung Hsu ; Chun-Yuan Lo ; Jui-Min Kuo ; Wei-Min Lee ; Cheng-Yen Shen ; Wein-Town Sun
Author_Institution :
SONOS Technol. Res. Program, eMemory Technol. Inc., Jhubei, Taiwan
Abstract :
In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and process of nitride film results in different amount of cycling degradation. The contribution of interface traps and ONO trapped/residue-charges to P/E cycling degradation has been successfully distinguished.
Keywords :
electron traps; flash memories; interface states; P-type SONOS NeoFlash®; bandgap energy distribution; charge trapping; density distribution; energy span; interface traps; program-erase cycling degradation; residue charges; vertical location; Degradation; Films; Programming; SONOS devices; Silicon compounds; Threshold voltage; Tunneling; NeoFlash®; SONOS; charge centroid; endurance;
Conference_Titel :
Memory Workshop (IMW), 2013 5th IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4673-6168-2
DOI :
10.1109/IMW.2013.6582135
