• DocumentCode
    2934355
  • Title

    Analysis of vertical location and bandgap energy distribution of trapped charges on P-type SONOS NeoFlash® after program/erase cycling

  • Author

    Chao-Wei Kuo ; Chia-Jung Hsu ; Chun-Yuan Lo ; Jui-Min Kuo ; Wei-Min Lee ; Cheng-Yen Shen ; Wein-Town Sun

  • Author_Institution
    SONOS Technol. Res. Program, eMemory Technol. Inc., Jhubei, Taiwan
  • fYear
    2013
  • fDate
    26-29 May 2013
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    In this paper, program/erase (P/E) cycling characteristics of the novel p-type SONOS NeoFlash® has been thoroughly discussed. The change of vertical location in the nitride and density distribution in energy span of the trapped charges after cycling has been observed. Different ONO thickness and process of nitride film results in different amount of cycling degradation. The contribution of interface traps and ONO trapped/residue-charges to P/E cycling degradation has been successfully distinguished.
  • Keywords
    electron traps; flash memories; interface states; P-type SONOS NeoFlash®; bandgap energy distribution; charge trapping; density distribution; energy span; interface traps; program-erase cycling degradation; residue charges; vertical location; Degradation; Films; Programming; SONOS devices; Silicon compounds; Threshold voltage; Tunneling; NeoFlash®; SONOS; charge centroid; endurance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2013 5th IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4673-6168-2
  • Type

    conf

  • DOI
    10.1109/IMW.2013.6582135
  • Filename
    6582135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2934355