DocumentCode
2934530
Title
High performance chip to substrate interconnects utilizing embedded structure
Author
Juhola, T. ; Kerzar, B. ; Mokhtari, M. ; Eastman, F.
Author_Institution
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
fYear
1999
fDate
1999
Firstpage
167
Lastpage
173
Abstract
A high performance packaging approach for state-of-the-art high frequency ICs has been adopted by creating fully planar Au-Cu-Au carrier-interconnect surfaces for the embedded chip(s) on low dielectric constant i.e. low k substrates using innovative wafer processing techniques. A mixture of coplanar and microstrip solution for interconnects has been introduced and modified e-gun, sputtering and liftoff steps used to create high quality surfaces in order to lower the losses for high speed, high frequency ICs for communication systems. A number of ICs fabricated in different technologies may be embedded in a MCM-module with interconnect design rules similar to that of IC-technologies using the techniques introduced in this paper
Keywords
high-speed integrated circuits; integrated circuit interconnections; integrated circuit packaging; microwave integrated circuits; multichip modules; Au-Cu-Au; MCM technology; chip-to-substrate interconnect; communication system; coplanar interconnect; e-gun; embedded structure; high-speed high-frequency IC packaging; liftoff; low-k substrate; microstrip interconnect; planar Au-Cu-Au carrier-interconnect surface; sputtering; wafer processing; Bonding; Costs; Frequency; Laser ablation; Laser modes; Microstrip; Packaging; Plasma chemistry; Substrates; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1999. 1999 Proceedings. 49th
Conference_Location
San Diego, CA
ISSN
0569-5503
Print_ISBN
0-7803-5231-9
Type
conf
DOI
10.1109/ECTC.1999.776166
Filename
776166
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