In-plane Anisotropies, Magnetostriction and Magnetoresistance of epitaxial Co films on GaAs(100) substrates

Author

Morley, N.A. ; Gibbs, M.R. ; Ahmad, E. ; Will, I.G. ; Xu, Y.

Author_Institution

Sheffield Univ., Sheffield

fYear

2006

fDate

8-12 May 2006

Firstpage

93

Lastpage

93

Abstract

In this paper, we present the in-plane anisotropies, magnetostriction constants, magnetoresistance and extraordinary Hall effect data for Co/GaAs(100) films thinner than 5 nm. Four films with Co thicknesses of 0.7, 1.4, 2.1 and 3.5 nm were grown by MBE, at room temperature and capped with 2 nm of Cr. The crystal structure was determined using reflected high energy electron density (RHEED).

Keywords

Hall effect; cobalt; crystal structure; enhanced magnetoresistance; magnetic epitaxial layers; magnetostriction; molecular beam epitaxial growth; reflection high energy electron diffraction; Co; Co-GaAs; Cr; GaAs(100) substrates; MBE; RHEED; crystal structure; epitaxial films; extraordinary Hall effect data; in-plane anisotropies; magnetoresistance; magnetostriction constants; molecular beam epitaxy; reflected high energy electron density; Anisotropic magnetoresistance; Extraordinary magnetoresistance; Gallium arsenide; Magnetic anisotropy; Magnetic films; Magnetostriction; Molecular beam epitaxial growth; Optical films; Perpendicular magnetic anisotropy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375593

Filename

4261527