Title :
In-plane Anisotropies, Magnetostriction and Magnetoresistance of epitaxial Co films on GaAs(100) substrates
Author :
Morley, N.A. ; Gibbs, M.R. ; Ahmad, E. ; Will, I.G. ; Xu, Y.
Author_Institution :
Sheffield Univ., Sheffield
Abstract :
In this paper, we present the in-plane anisotropies, magnetostriction constants, magnetoresistance and extraordinary Hall effect data for Co/GaAs(100) films thinner than 5 nm. Four films with Co thicknesses of 0.7, 1.4, 2.1 and 3.5 nm were grown by MBE, at room temperature and capped with 2 nm of Cr. The crystal structure was determined using reflected high energy electron density (RHEED).
Keywords :
Hall effect; cobalt; crystal structure; enhanced magnetoresistance; magnetic epitaxial layers; magnetostriction; molecular beam epitaxial growth; reflection high energy electron diffraction; Co; Co-GaAs; Cr; GaAs(100) substrates; MBE; RHEED; crystal structure; epitaxial films; extraordinary Hall effect data; in-plane anisotropies; magnetoresistance; magnetostriction constants; molecular beam epitaxy; reflected high energy electron density; Anisotropic magnetoresistance; Extraordinary magnetoresistance; Gallium arsenide; Magnetic anisotropy; Magnetic films; Magnetostriction; Molecular beam epitaxial growth; Optical films; Perpendicular magnetic anisotropy; Substrates;
Conference_Titel :
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
1-4244-1479-2
DOI :
10.1109/INTMAG.2006.375593
