Magnetization Relaxation in Sputtered Thin Fe Films; A FMR study

Author

Kuanr, B.K. ; Kuanr, A.V. ; Camley, R.E. ; Celinski, Z.

fYear

2006

fDate

8-12 May 2006

Firstpage

97

Lastpage

97

Abstract

In this paper, the authors studied the ferromagnetic resonance (FMR) linewidth of thin Fe films in NM/Fe/NM structures (NM[30 Aring]=Al, Cu, Ti and Ta) to investigate the relaxation mechanism. Polycrystalline Fe films, with thicknesses of 20 to 300 Aring in steps of 20 Aring were grown by sputtering on GaAs(100) substrates. The experimental results and their interpretation agreed with the microscopic theories taking into account spin-current generated by the precession of magnetization in NM/Fe/NM films.

Keywords

aluminium; copper; ferromagnetic materials; ferromagnetic resonance; interface magnetism; iron; magnetic relaxation; magnetic thin films; magnetisation; metallic thin films; spin polarised transport; tantalum; titanium; Al-Fe; Cu-Fe; FMR; GaAs; GaAs(100) substrate; Ta-Fe; Ti-Fe; ferromagnetic resonance linewidth; magnetization precession; magnetization relaxation; polycrystalline iron film; size 20 A to 300 A; spin-current; sputtered thin films; Damping; Educational institutions; Gallium arsenide; Iron; Light scattering; Magnetic films; Magnetic resonance; Magnetization; Springs; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.375597

Filename

4261531