DocumentCode
2934767
Title
Solid State Storage, Limits of Flash Memory
Author
Fazio, A.
Author_Institution
Intel, Santa Clara
fYear
2006
fDate
8-12 May 2006
Firstpage
101
Lastpage
101
Abstract
Flash memory technology has followed Moore´s Law for nine generations and with the introduction of 90 nm technology, moved into the nanotechnology age. Scaling is expected to continue but with increasingly difficulty. In order to meet technology scaling, the mainstream transistor based flash technologies will start evolving to incorporate material and structural innovations. Based on the introduction of material innovations, it is expected that flash memory cell can scale through at least the end of the decade (2010) using techniques that are available today or projected to be available in the near future.
Keywords
flash memories; nanotechnology; random-access storage; Moore law; NAND flash; NOR flash; flash memory; nanotechnology; nonvolatile memories; phase change memory; solid state storage; Flash memory; High K dielectric materials; High-K gate dielectrics; Nanotechnology; Nonvolatile memory; Solid state circuits; Stress; Technological innovation; Thickness control; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.375601
Filename
4261535
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