• DocumentCode
    2934767
  • Title

    Solid State Storage, Limits of Flash Memory

  • Author

    Fazio, A.

  • Author_Institution
    Intel, Santa Clara
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    101
  • Lastpage
    101
  • Abstract
    Flash memory technology has followed Moore´s Law for nine generations and with the introduction of 90 nm technology, moved into the nanotechnology age. Scaling is expected to continue but with increasingly difficulty. In order to meet technology scaling, the mainstream transistor based flash technologies will start evolving to incorporate material and structural innovations. Based on the introduction of material innovations, it is expected that flash memory cell can scale through at least the end of the decade (2010) using techniques that are available today or projected to be available in the near future.
  • Keywords
    flash memories; nanotechnology; random-access storage; Moore law; NAND flash; NOR flash; flash memory; nanotechnology; nonvolatile memories; phase change memory; solid state storage; Flash memory; High K dielectric materials; High-K gate dielectrics; Nanotechnology; Nonvolatile memory; Solid state circuits; Stress; Technological innovation; Thickness control; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375601
  • Filename
    4261535