• DocumentCode
    2934778
  • Title

    The Future Prospect of Semiconductor Nonvolatile Memory

  • Author

    Kim, K.

  • Author_Institution
    Samsung Electron. Co., Yongin
  • fYear
    2006
  • fDate
    8-12 May 2006
  • Firstpage
    102
  • Lastpage
    102
  • Abstract
    As mobile appliances are prevailing in our daily lives, the nonvolatile memory suitable for mobile applications such as MP3, DSC, PDA and so on becomes indispensable elements and it is anticipated that the non-volatile memory usage will be much increased in future due to such diversified applications and some possibilities of supplanting incumbent applications like HDD. Nonvolatile memory technology, especially NAND flash technology is going through the fastest evolution amongst the silicon technologies. It is highly expected that the same trend of evolution or more the aggressive will be continued in the future. This paper presents the different types of existing and emerging nonvolatile memories such as NAND technology, NOR falsh, PRAM, FRAM, MRAM or spintronics, RRAM and others, and the challenges faced by each of this technologies.
  • Keywords
    NAND circuits; ferroelectric storage; magnetic storage; magnetoelectronics; random-access storage; FRAM; MRAM; NAND flash; NOR falsh; PRAM; RRAM; ferroelectric RAM; magnetic RAM; phase change RAM; resistor RAM; semiconductor nonvolatile memory; spintronics; Dielectric losses; Energy barrier; Ferroelectric films; Flash memory; MIM capacitors; Mass production; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2006. INTERMAG 2006. IEEE International
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    1-4244-1479-2
  • Type

    conf

  • DOI
    10.1109/INTMAG.2006.375602
  • Filename
    4261536