DocumentCode
2934778
Title
The Future Prospect of Semiconductor Nonvolatile Memory
Author
Kim, K.
Author_Institution
Samsung Electron. Co., Yongin
fYear
2006
fDate
8-12 May 2006
Firstpage
102
Lastpage
102
Abstract
As mobile appliances are prevailing in our daily lives, the nonvolatile memory suitable for mobile applications such as MP3, DSC, PDA and so on becomes indispensable elements and it is anticipated that the non-volatile memory usage will be much increased in future due to such diversified applications and some possibilities of supplanting incumbent applications like HDD. Nonvolatile memory technology, especially NAND flash technology is going through the fastest evolution amongst the silicon technologies. It is highly expected that the same trend of evolution or more the aggressive will be continued in the future. This paper presents the different types of existing and emerging nonvolatile memories such as NAND technology, NOR falsh, PRAM, FRAM, MRAM or spintronics, RRAM and others, and the challenges faced by each of this technologies.
Keywords
NAND circuits; ferroelectric storage; magnetic storage; magnetoelectronics; random-access storage; FRAM; MRAM; NAND flash; NOR falsh; PRAM; RRAM; ferroelectric RAM; magnetic RAM; phase change RAM; resistor RAM; semiconductor nonvolatile memory; spintronics; Dielectric losses; Energy barrier; Ferroelectric films; Flash memory; MIM capacitors; Mass production; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.375602
Filename
4261536
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