Study of Boron-Doped Silicon Carbide Thin Films

Author

Si, Shangzhuo ; Yang, Huidong ; Huang, Bo ; Xu, Baoyu ; Deng, Xinghan ; Shi, Jundai ; Ma, Chubin

Author_Institution

Dept. of Electron. Eng., Jinan Univ., Guangzhou, China

fYear

2010

fDate

19-21 June 2010

Firstpage

1

Lastpage

4

Abstract

Prepared a-SiC thin films with plasma enhanced chemical vapor deposition (PECVD) at low temperature (135°C), by using CH₄, H₂, SiH₄ and B₂H₆. And with Raman spectroscopy, ellipsometry, absorption spectroscopy and other equipment to demonstrate the film characteristics such as structural characteristics, growth rate characteristics, band gap and refractive index spectra. The results show that we facbricate amorphous silicon carbide successfully under the condition of flow 80 sccm, RF power 24 w, working pressure 74 pa, substrate temperature 132°C.

Keywords

Raman spectra; boron; ellipsometry; energy gap; plasma CVD; refractive index; semiconductor doping; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors; Raman spectroscopy; SiC:B; absorption spectroscopy; amorphous films; band gap; boron-doped silicon carbide thin films; ellipsometry; plasma CVD; plasma enhanced chemical vapor deposition; power 24 W; pressure 74 Pa; refractive index spectra; structural characteristics; temperature 132 degC; temperature 135 degC; Absorption; Chemical vapor deposition; Ellipsometry; Plasma chemistry; Plasma temperature; Raman scattering; Semiconductor thin films; Silicon carbide; Spectroscopy; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronic (SOPO), 2010 Symposium on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-4963-7

Electronic_ISBN

978-1-4244-4964-4

Type

conf

DOI

10.1109/SOPO.2010.5504009

Filename

5504009