Title :
Study of Boron-Doped Silicon Carbide Thin Films
Author :
Si, Shangzhuo ; Yang, Huidong ; Huang, Bo ; Xu, Baoyu ; Deng, Xinghan ; Shi, Jundai ; Ma, Chubin
Author_Institution :
Dept. of Electron. Eng., Jinan Univ., Guangzhou, China
Abstract :
Prepared a-SiC thin films with plasma enhanced chemical vapor deposition (PECVD) at low temperature (135°C), by using CH4, H2, SiH4 and B2H6. And with Raman spectroscopy, ellipsometry, absorption spectroscopy and other equipment to demonstrate the film characteristics such as structural characteristics, growth rate characteristics, band gap and refractive index spectra. The results show that we facbricate amorphous silicon carbide successfully under the condition of flow 80 sccm, RF power 24 w, working pressure 74 pa, substrate temperature 132°C.
Keywords :
Raman spectra; boron; ellipsometry; energy gap; plasma CVD; refractive index; semiconductor doping; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors; Raman spectroscopy; SiC:B; absorption spectroscopy; amorphous films; band gap; boron-doped silicon carbide thin films; ellipsometry; plasma CVD; plasma enhanced chemical vapor deposition; power 24 W; pressure 74 Pa; refractive index spectra; structural characteristics; temperature 132 degC; temperature 135 degC; Absorption; Chemical vapor deposition; Ellipsometry; Plasma chemistry; Plasma temperature; Raman scattering; Semiconductor thin films; Silicon carbide; Spectroscopy; Sputtering;
Conference_Titel :
Photonics and Optoelectronic (SOPO), 2010 Symposium on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-4963-7
Electronic_ISBN :
978-1-4244-4964-4
DOI :
10.1109/SOPO.2010.5504009
