Title :
A testing method and device for intrinsic stress measurement in wafer bumping process
Author :
Guo, Yifan ; Mitchell, Dianne ; Sarihan, Vijay ; Kuo, Shun-Meen ; Lin, Jung-Kai ; Yeung, Betty ; Lee, Tom ; Zheng, Dawei
Author_Institution :
Semicond. Products Sector, Motorola Inc., Tempe, AZ, USA
Abstract :
A novel concept and the related testing methodology of a sensing device is presented. This device is used to determine the local intrinsic stresses induced in wafer processes such as metallization and bumping. The sensing device is essentially a pressure sensor structure with a specified membrane thickness. This sensing device is put into the processes which are under investigation and being processed together with the production wafers. During the process, the membrane is deformed due to the process induced intrinsic stress. The membrane deformation is either monitored continuously or measured after each process step by an optical method. Intrinsic stresses are calculated from the measured membrane deformations
Keywords :
deformation; integrated circuit interconnections; integrated circuit manufacture; integrated circuit measurement; integrated circuit metallisation; integrated circuit testing; light interferometry; membranes; nickel; pressure sensors; production testing; stress measurement; thickness measurement; Ni; Ni plating process; Si; Si membrane deformation; continuous monitoring; intrinsic stress measurement; local intrinsic stresses; optical measurement method; pressure sensor structure; process induced intrinsic stress; production wafers; sensing device; specified membrane thickness; testing method; wafer bumping process; Biomembranes; Monitoring; Optical films; Optical sensors; Semiconductor thin films; Sputtering; Stress measurement; Testing; Thin film sensors; Transistors;
Conference_Titel :
Electronic Components and Technology Conference, 1999. 1999 Proceedings. 49th
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5231-9
DOI :
10.1109/ECTC.1999.776187
