DocumentCode :
2935010
Title :
High speed and high efficient all optical switch using exciton-polaritons in GaAs thin films
Author :
Tomita, N. ; Akiyama, K. ; Nishimura, T. ; Nomura, Y. ; Isu, T.
Author_Institution :
Centre of Adv. Technol. R&D, Mitsubishi Electr. Corp., Hyogo, Japan
fYear :
2000
fDate :
10-15 Sept. 2000
Abstract :
Summary form only given. We have been investigated optical properties of precisely size-controlled GaAs thin films, where exciton motion is quantized and non-local interaction between excitons and photons should be considered. We observed an enhanced third-order nonlinear optical response for a 110 nm-thick GaAs film using degenerate four-wave mixing. The observed nonlinear response was 25 times larger than that of a 1 /spl mu/m-thick film. This result agrees with a theoretical proposal of enhanced nonlinear optical responses of exciton-polaritons in a thin film with a particular thickness. In this paper, we demonstrate, for the first time, optical switching using nonlinear optical responses of exciton-polaritons in a GaAs thin film.
Keywords :
III-V semiconductors; excitons; gallium arsenide; high-speed optical techniques; multiwave mixing; optical switches; polaritons; semiconductor thin films; GaAs; GaAs thin film; degenerate four-wave mixing; exciton-polariton; high-speed all-optical switch; third-order nonlinear optical properties; Excitons; Gallium arsenide; High speed optical techniques; Nonlinear optics; Optical films; Optical pumping; Optical switches; Photonic band gap; Solitons; Time factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics Conference, 2000. Conference Digest. 2000 International
Conference_Location :
Nice, France
Print_ISBN :
0-7803-6318-3
Type :
conf
DOI :
10.1109/IQEC.2000.907760
Filename :
907760
Link To Document :
بازگشت