DocumentCode
2935164
Title
Spin injection at CoFe/ITO heterojunction at low temperature
Author
Wen, Q. ; Song, Y. ; Xiao, J. ; Zhang, H.
Author_Institution
Univ. of Electron. Sci. & Technol. of China, Chengdu
fYear
2006
fDate
8-12 May 2006
Firstpage
124
Lastpage
124
Abstract
In summary, an ohmic contact CoFe/ITO heterojunction was fabricated and the spin-injection in this heterojunction was confirmed by the measurement of the TMR effect and the I-V characteristic under applied magnetic field.
Keywords
cobalt alloys; ferromagnetic materials; indium compounds; iron alloys; ohmic contacts; spin polarised transport; tunnelling magnetoresistance; CoFe-ITO; I-V characteristic; TMR effect; applied magnetic field; heterojunction; low temperature; ohmic contact; spin injection; tunnelling magnetoresistance; Area measurement; Extraterrestrial measurements; Heterojunctions; Indium tin oxide; Magnetic field measurement; Ohmic contacts; Spin polarized transport; Temperature; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.375624
Filename
4261558
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